Activation energy of DC-drift of x-cut LiNbO 3 optical intensity modulators
IEEE Photonics Technology Letters（2000）
Abstract
The DC-bias-induced drift phenomenon in LiNbO/sub 3/ optical intensity modulators is a main cause of device wearout failure. In order to estimate the device lifetime, an activation energy value Ea of the drift is needed, and Ea=1.0 eV is already known for z-cut LiNbO/sub 3/ modulators. However, Ea of x-cut LiNbO/sub 3/ modulators is not known even though there is a possibility that the Ea depends ...
MoreTranslated text
Key words
Optical modulation,Intensity modulation,High speed optical techniques,Optical buffering,Optical devices,Optical feedback,Optical waveguides,Temperature,Life estimation,Lifetime estimation
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined