The Influence of Phosphorus Impregnated Ultra-High Purity Cu Anode on the Particle Pollution and Cu Wiring Resistivity in Processing of 8 Inch Wafers

In order to apply high-purity plating process using high purity plating materials (anode and electrolyte) to practical use, the influence of phosphorus impregnated ultra high purity Cu anode on the particle pollution and Cu wiring resistivity in the 8 inch wafer processes has been investigated. Black film formed on the phosphorus impregnated ultra high purity 99.999999 mass% (8 N) anode prevents the emission of fine particles from anode to electrolyte, resulting in the formation of low resistivity narrow Cu wires.