Formation of multiple dislocations in Si solid-phase epitaxy regrowth process using stress memorization technique

•Provide formation mechanism of stress-memorization-technique induced edge-dislocation by molecular dynamic simulation.•Explain the line defect formation mechanism and defect types.•Validate simulation results and defect types by high-resolution transmission electron microscopy and inverse fast Fourier transform images.•Calculate the strain distribution of SMT induced dislocations.