Slow relaxation of resistance in nanostructured La0.83Sr0.17MnO3 films induced by pulsed magnetic fields

The results of colossal magnetoresistance (MR) relaxation investigations in nanostructured and epitaxial La-Sr-Mn-O films grown by the MOCVD technique are presented. The films were studied in a pulsed magnetic field ranged from 2 to 10 T at the temperature of 80 K. The slow relaxation of resistance which takes place during milliseconds when the magnetic field is switched off is analysed using the Kohlrausch-Williams-Watts model. It was found that this relaxation is typical of spin-glass materials and is related with properties of disordered grain boundaries of nanostructured films. The MR relaxation of epitaxial films was not observed. The influence of film preparation conditions on MR relaxation was analysed in order to develop high pulsed magnetic field sensors exhibiting small dynamic "memory" effect and operating at low temperatures.