Construction of an X-Ray Detecting Module and Its Application to Relative-Sensitivity Measurement Using A Silicon Pin Diode in Conjunction with Short-Decay-Time Scintillators
Nuclear instruments and methods in physics research Section A, Accelerators, spectrometers, detectors and associated equipment/Nuclear instruments & methods in physics research Section A, Accelerators, spectrometers, detectors and associated equipment(2014)
摘要
To detect low-dose-rate X-rays, we have developed an X-ray-detecting module for semiconductor diodes. The module consists of a current–voltage (I–V) amplifier, a voltage–voltage (V–V) amplifier, and an alternating-current adopter with a smoothing circuit. The photocurrents flowing through a diode are converted into voltages and amplified using the I–V and V–V amplifiers. To measure relative sensitivities, we used three silicon PIN diodes (Si-PIN), a cerium-doped yttrium aluminum perovskite [YAP(Ce)] crystal, and a Lu2(SiO4)O [LSO] crystal. Three detectors are as follows: an Si-PIN, a YAP(Ce)–Si-PIN, and an LSO–Si-PIN. Using the three detectors, the amplifier output voltages were in proportion to the tube current at a constant tube voltage of 70kV. Using a multichannel analyzer, the event-pulse-height spectra were measured to analyze X-ray-electric conversion effect in the three detectors. The output voltage of the Si-PIN was approximately twice as high as those obtained using the YAP(Ce)–Si-PIN and the LSO–Si-PIN at the measurement conditions.
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关键词
X-ray detecting module,Relative sensitivity measurement,Si-PIN diode,YAP(Ce)-Si-PIN diode,LSO-Si-PIN diode,Event-pulse-height spectra
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