Measurements of the reverse current of highly irradiated silicon sensors

The reverse current of irradiated silicon sensors depends, among other variables, on sensor temperature and irradiation fluence. The temperature dependency is parameterized by the effective energy Eeff and the fluence dependency by the current related damage rate α. The literature values for Eeff and α were obtained from previous measurements, but α was only measured directly to a fluence up to 1×10151MeV neutron equivalent fluence per cm2 (neq/cm2).