High speed silicon electro-optic modulator with p-i-n comb diode

An electro-optic modulator based on a 1-dimensional photonic crystal in a Fabry–Perot structure in a silicon on insulator waveguide with a comb like diode structure is proposed. By placing the doped regions of the p-i-n diode into the minima of the standing wave inside the resonator, the modulation bandwidth is increased compared to a conventional stripe diode. The highly doped regions inside the waveguide induce only low additional losses.