Electric subbands in a both-side-modulation-doped In0.52Al0.48As/In0.65Ga0.35As single quantum well

Shubnikov-de Haas and Van der Pauw Hall effect measurements on an In0.52Al0.48As/In0.65Ga0.35As lattice-mismatched single quantum well grown by molecular beam epitaxy have been carried out to investigate the electrical properties of an electron ps and subband energies in a unique potential well. The measurements at 1.5 K have demonstrated clearly the existence of a quasi-two-dimensional electron gas in the quantum well. It is found that three subbands in the quantum well are occupied. Electron energy subbands in the quantum well were calculated by a self-consistent method taking into account exchange-correlation effects and making use of the experimentally determined carrier density.