Effect of Stacking Faults in Triangular Defects on 4H-SiC Junction Barrier Schottky Diodes
JAPANESE JOURNAL OF APPLIED PHYSICS(2013)
摘要
The relationship between stacking faults and the position of the leakage current inside a triangular defect was analyzed. Triangular defects are categorized into two types on the basis of the current-voltage (I-V) characteristics. It was found that stacking faults (SFs) of the 3C structure inside a triangular defect increase leakage current at a reverse bias voltage as well as forward current at a low bias voltage, while SFs of the SF(4, 2) structure inside a triangular defect do not lead to deterioration of device performance in this case. (C) 2013 The Japan Society of Applied Physics
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关键词
diodes,triangular defects,stacking faults,h-sic
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