Effect Of Channel Dopant Non-Uniformity On Transconductance Variability

Kazuo Terada,Ryo Takeda,Katsuhiro Tsuji,Takaaki Tsunomura,Akio Nishida,Tohru Mogami

JAPANESE JOURNAL OF APPLIED PHYSICS（2012）

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摘要

The effect of the channel dopant non-uniformity on metal-oxide-semiconductor field-effect transistor (MOSFET) transconductance variability is studied using the simple current model and the test MOSFETs having various channel width and length. It is found that this effect is significant for relatively large MOSFETs. (C) 2012 The Japan Society of Applied Physics

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