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Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors

IEEE Transactions on Nuclear Science(2012)

Cited 48|Views28
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Abstract
Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared. It appears that for a given displacement damage dose, the hot pixel tail distributions are very similar, if normalized properly. This behavior is observed on all the tested CIS designs (4 designs, 2 techn...
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Key words
Dark current,Protons,Radiation effects,Neutrons,Photodiodes,CMOS image sensors,Silicon
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