Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors
IEEE Transactions on Nuclear Science(2012)
Abstract
Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared. It appears that for a given displacement damage dose, the hot pixel tail distributions are very similar, if normalized properly. This behavior is observed on all the tested CIS designs (4 designs, 2 techn...
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Key words
Dark current,Protons,Radiation effects,Neutrons,Photodiodes,CMOS image sensors,Silicon
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