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Effect of ${\rm Cd}_{0.9}{\rm Zn}_{0.1}{\rm Te\!:\!In}$ Crystals Annealing on Their High-Temperature Electrical Properties

IEEE Transactions on Nuclear Science(2011)

Cited 32|Views11
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Key words
electron density,annealing,indium,electron mobility,temperature measurement,inclusions,point defects,single crystal,semiconductor doping,stoichiometry,thermoelectricity,electrical conductivity
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