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Reduced Droop Effect in Nitride Light Emitting Diodes With Taper-Shaped Electron Blocking Layer

Chao Liu,Zhiwei Ren,Xin Chen,Bijun Zhao,Xingfu Wang,Shuti Li

IEEE Photonics Technology Letters（2014）

Cited 12|Views6
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Abstract
A taper-shaped AlGaN electron blocking layer (TEBL) has been designed and incorporated in InGaN/GaN light emitting diodes (LEDs) to promote hole injection and electron confinement under high current injection conditions. Fabricated LEDs with a TEBL exhibit reduced operating voltage, enhanced efficiency as well as alleviated droop effect, compared with those with a conventional bulk AlGaN EBL. The ...
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Key words
Light emitting diodes,Charge carrier processes,Gallium nitride,Quantum well devices,Aluminum gallium nitride,Radiative recombination,Color
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