High performance 20 nm GaSb/InAs junctionless tunnel field effect transistor for low power supply

We present a GaSb/InAs junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the present device architecture, which can be exploited as a digital switching device for sub 20 nm technology. Numerical simulations resulted in an I-OFF of similar to 8 x 10(-17) A/mu m, I-ON of similar to 9 mu A/mu m, I-ON/I-OFF of similar to 1 x 10(11), subthreshold slope of 9.33 mV/dec and DIBL of similar to 87 mV/V for GaSb/InAs JLTFET at a temperature of 300 K, gate length of 20 nm, HfO2 gate dielectric thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and V-DD of 0.4 V.