MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

The impact of various thicknesses of Al2O3 metal-insulator-metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm(2) and acceptable voltage coefficients of capacitance of 681 ppm/V-2 at 1 MHz. An outstanding VCC-alpha of 74 ppm/V-2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.