Development Of 10 Kv 4h-Sic Jbs Diode With Fgr Termination

The design, fabrication, and electrical characteristics of the 4H-SiC JBS diode with a breakdown voltage higher than 10 kV are presented. 60 floating guard rings have been used in the fabrication. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The n-type epilayer is 100 mu m in thickness with a doping of 6 x 10(14) cm(-3). The on-state voltage was 2.7 V at J(F) = 13 A/cm(2)