Anomalous Temperature-Dependent Photoluminescence Peak Energy In Inaln Alloys
JOURNAL OF SEMICONDUCTORS(2014)
摘要
InAlN has been studied by means of temperature-dependent time-integrated photoluminescence and time-resolved photoluminescence. The variation of PL peak energy did not follow the behavior predicted by Varshni formula, and a faster redshift with increasing temperature was observed. We used a model that took account of the thermal activation and thermal transfer of localized excitons to describe and explain the observed behavior. A good fitting to the experiment result is obtained. We believe the anomalous temperature dependence of PL peak energy shift can be attributed to the temperature-dependent redistribution of localized excitons induced by thermal activation and thermal transfer in the strongly localized states. V-shaped defects are thought to be a major factor causing the strong localized states in our In-0:153 Al0:847N sample.
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关键词
InAlN, photoluminescence, thermal activation, V-defects
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