Electro-optical modeling of high power semiconductor laser based on an InGaAs/GaAs/InGaP heterostructure

We present the electrical-optical modeling of a high power semiconductor laser diode for emission at 800 nm wavelength. We describe a thorough detailed procedure for the modeling of a semiconductor laser device with a Separate Confinement Heterostructure (SCH), based on the material alloys of III-V compounds families, InGaAsP/InGaAsP/InGaP on GaAs substrates. The heterostructure active region prod...