Light Emission Properties of GaN-Based Laser Diode Structures
Acta Physica Polonica A(2005)
摘要
Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
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关键词
laser,emission,gan-based
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