Effect Of Pressure And Chemical Substitutions On The Charge-Density-Wave In Laagsb2

We present data on the crystal structure and evolution of the electrical resistivity in lightly doped La1-xRxAgSb2 (R=Gd, Y, Ce, and Nd) at ambient pressure and in LaAgSb2 under hydrostatic pressure. The upper charge density wave transition is suppressed by both doping and pressure with substitution-related disorder being the dominant mechanism for this suppression in the former case and the anisotropic pressure dependence of the unit cell dimensions (as seen in the c/a ratio) prevailing in the latter case.