Atomic geometry and electron structure of the GaTe(102 ̄) surface

The natural cleavage plane $(10\overline{2})$ of a layered compound GaTe possesses unique properties due to high in-plain anisotropy with the corresponding lattice constant of 1.18 nm. The structure and electronic properties of the GaTe $(10\overline{2})$ clean surfaces have been studied both experimentally, using photoelectron spectroscopy, low-energy electron diffraction (LEED), and scanning tunneling microscopy, and theoretically, using density functional theory. The results clearly indicate a monoclinic structure of the surface layer, with no pronounced reconstruction or relaxation of the surface observed. This finding contradicts the previous LEED study, where a surface monoclinic-hexagonal phase transformation was reported. The GaTe $(10\overline{2})$ surface is found to be quite stable in time and resistant to oxidation. This makes gallium monotelluride an attractive substrate for growth of one-dimensional metal structures.