Observation Of Disorder-Driven Carrier Localization By Auger Resonant Raman Scattering In N-Type Doped Zno
PHYSICAL REVIEW B(2011)
摘要
We present direct evidence of carrier localization in (Zn, Al)O by using Auger resonant Raman scattering, which makes use of the competition between the core-hole decay time and the motion of the photoexcited electrons. From the branching ratio of the competing two channels, i.e., normal Auger-like and spectator Auger processes, we found that the average carrier transfer time from a donor site is in the range of 6-140 fs depending on structural disorder. The transfer time shows a rapid increase at a certain energy in the conduction band. This result suggests that the disorder-induced localization limits the electronic conductivity in the heavily n-doped ZnO.
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关键词
x ray absorption spectroscopy
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