High-k ZrO 2 dielectric thin films on GaAs semiconductor with reduced regrowth of native oxides by atomic layer deposition

R B Konda,Christine M White, J Smak,R Mundle,M Bahoura,A K Pradhan

Chemical Physics Letters（2013）

引用 13|浏览3

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摘要

GaAs surfaces were self-cleaned through fast pulsing of the Trimethylaluminum (TMA) precursor by reducing and restraining the regrowth of native oxides using the atomic layer deposition (ALD).

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High-k Dielectrics

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