Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)

By the methods of Auger-spectroscopy and mass-spectrometry of secondary ions, small-angle electron diffraction, X-ray and resistometry analyses the solid-state reactions in the Ti(5 nm)/ Ni(24 nm)/Si((001)) thin film system at annealing in running nitrogen in the temperature interval of 723 - 1273 K are investigated. Regularities of phase transformations, consistency of solid-state reactions, layer-by-layer redistribution of components during annealing, features of surface morphology during formation of inclusions of suicide phases are established.