Atomic-layer-deposited SiO 2 /TiO 2 /SiO 2 sandwiched dielectrics for metal–insulator–metal capacitor application

Qiuxiang Zhang,Bao Zhu,Lifeng Zhang,Shijin Ding

Microelectronic Engineering（2014）

引用 6|浏览14

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摘要

•SiO2/TiO2/SiO2 (STS) dielectrics were formed by atomic-layer-deposition for MIM capacitor.•Compared with TiO2, the STS dielectrics can improve significantly the leakage characteristics.•The conduction mechanisms of the STS MIM capacitor were discussed.

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关键词

SiO2/TiO2/SiO2,Atomic-layer-deposition,Metal-insulator–metal capacitor,Conduction mechanism

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