A novel technique exploiting C – V , G – V and I – V simulations to investigate defect distribution and native oxide in high-κ dielectrics for III–V MOSFETs

•A defect spectroscopy technique is developed to investigate high-κ dielectrics.•The method exploit simultaneous simulations of I–V and multi-frequency C–V and G–V.•Sensitivity curves for IV, CV and GV are used to determine the defect map.•The defects map and the native oxide thickness is determined for III–V MOS.•Other physical parameters of the MOS system are determined consistently.