Effect of IZO buffer layer on the electrical performance of Ge-doped InZnO thin-film transistors

Display Omitted We fabricated the Ge-IZO TFT using buffer-layer-stacked channel layers.5nm-thick high carrier concentration IZO layer were used as buffer layer.The buffer layers were inserted between channel and electrode, or insulator and channel.The TFT devices were improved by the insertion of IZO buffer layer.The PBS and NBS stabilities were improved with IZO buffer layer. We investigated the performance of germanium-indium-zinc-oxide (Ge-IZO) thin film transistors (TFTs) depending on the inserted IZO buffer layer. The electrical performance was dramatically changed depending on the position and carrier concentration of the IZO buffer layer. The saturation mobility was enhanced by a factor of four for the best combination of position and carrier concentration. The bias stabilities of the TFTs did not change considerably with the insertion of the IZO buffer layer and the position of the buffer layer. Therefore, the modulated channel structure with inserted buffer layers could enhance the device performance without any demerits.