Effect of Gamma Radiation on Surface Structures of Ruthenium Oxide Thin Film Prepared by Electrochemical Deposition
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS(2013)
摘要
The present work is a study of the gamma-radiation induced changes in surface structures and physical properties of nanocrystalline ruthenium oxide (RuO2) thin film, deposited onto a tin-doped indium oxide (ITO) electrode. RuO2 film was electrochemically deposited at 70 degrees C from an aqueous solution of RuCl3 in the presence of O-2, onto an ITO electrode. To determine the effect of gamma-irradiation on the physicochemical properties of the RuO2 thin film, various doses were employed using a Cobalt-60 source at a rate of 1.0 x 10(4) Gy/h. The surface morphology was examined using scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS) was used to confirm the formation of RuO2. The results indicate that highly adherent and uniform ruthenium oxide film was formed. The RuO2 as-prepared and radiated RuO2 thin films were tested as electrode materials for use in rechargeable lithium batteries.
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关键词
RuO2,Thin Film,Gamma Radiation Dose,ITO,Electrochemical Deposition,Lithium Batteries
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