Structural, Electrical And Optical Properties Of Zno/Si Structures Prepared By Sputtering Or Pulsed Laser Deposition

The present paper is based on study of polycrystalline ZnO: Al films deposited by RF sputtering in Ar atmosphere and by pulsed laser deposition (PLD) on p and n-type Si. The structural, electrical and optical properties of processed devices were investigated before and after annealing in temperature range of 400-600 degrees C. Films deposited by RF sputtering show conductive ZnO: Al n-type layer. After annealing in N-2 atmosphere the conductivity of ZnO layer increased as ZnO/Si interface exhibits diffusion of Si into ZnO and O into Si. This effect was confirmed show promising photodetector properties in the spectral range of 380 divided by 1050 nm by SIMS depth profile measurements. PLD deposited ZnO films under certain growth conditions (400 degrees C) in O-2 atmosphere show p-type layer formation. The investigated Si/ZnO heterostructures shows promising photodetector properties in the spectral range of 380 divided by 1050 nm.