An Improved Small-Signal Model for SiGe HBT Under OFF-State, Derived From Distributed Network and Corresponding Model Parameter Extraction

Yabin Sun,Jun Fu,Ji Yang,Jun Xu,Yudong Wang,Jie Cui,Wei Zhou,Zhang Wei,Zhihong Liu

IEEE Transactions on Microwave Theory and Techniques（2015）

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摘要

An improved high-frequency small-signal model for SiGe HBTs under the off-state is presented in this paper. The proposed model takes into account the distribution characteristics of the intrinsic transistor, link base region under spacer, and extrinsic base-collector junction. The equivalent circuit for each region is separately derived using the transmission line equation with reasonable approxim...

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关键词

Equivalent circuits,Resistance,Transistors,Silicon germanium,Mathematical model,Capacitance,Integrated circuit modeling

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