0.10 ,urn graded InGaAs Channel InP HEMT with 305 GHz f~ and 340 GHz fillaxM Wojtowicz,R Lai,D C Streit,G I Ng,T Block,K L Tan,P H Liu,A Freudenthal,R M DiaIEEE Electron Device Letters(1994)引用 23|浏览4暂无评分AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要