Improvement of Negative Bias Stress Stability in Mg 0.03 Zn 0.97 O Thin-Film Transistors

Chiehjen Ku,Wenchiang Hong, Tanvir Mohsin,Rui Li,Ziqing Duan,Yicheng Lu

IEEE Electron Device Letters（2015）

引用 33|浏览5

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摘要

A small amount of Mg is introduced into ZnO to form the ternary compound Mg0.03Zn0.97O (MZO), which serves as the channel layer of thin-film transistors (TFTs). The MZO TFT shows smaller subthreshold swing of 0.57 V/decade and much better negative bias stress (NBS) stability, which shifts only by -1.21 V in the threshold voltage over its ZnO TFT counterpart (subthreshold swing of 0.79 V/decade; -3...

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关键词

Thin film transistors,Zinc oxide,II-VI semiconductor materials,NIST,Threshold voltage,Stress,Testing

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