High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates

D F Brown,Keisuke Shinohara,A Corrion,Rongming Chu,A J Williams,Joel C Wong,Ivan Alvaradorodriguez, R Grabar, Michael A Johnson,C Butler,Dayward Santos,Shawn D Burnham, J F Robinson,Daniel Zehnder,Samuel Jungjin Kim,Thomas C Oh,M Micovic

IEEE Electron Device Letters（2013）

引用 38|浏览12

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摘要

We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 Ωmm), enhancement-mode operation (VTH=+0.35 V), and excellent high-frequency performanc...

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关键词

Logic gates,Gallium nitride,Switches,Voltage measurement,HEMTs,MODFETs,Ohmic contacts

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