Low-Frequency Noise Properties in Double-Gate Amorphous InGaZnO Thin-Film Transistors Fabricated by Back-Channel-Etch Method

C Jeong,J I Kim,Jongho Lee,Jaegwang Um,Jin Jang,Hyuckin Kwon

IEEE Electron Device Letters（2015）

Cited 21|Views2

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Abstract

We investigated the low-frequency noise (LFN) properties of double-gate (DG) amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The LFN from all of the DG, top-gate (TG), and bottom-gate (BG) operation modes was well explained in the framework of the correlated carrier number-mobility fluctuation. However, the extracted noise parameters of the border trap density (NT), Coul...

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Key words

Thin film transistors,Low-frequency noise,Indium gallium zinc oxide,Logic gates,Semiconductor device measurement

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