High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode
IEEE Electron Device Letters（2013）
Abstract
The pyramid structure fabricated with the potassium hydroxide (KOH) anisotropically etched (100) silicon substrate has been deposited with a copper film as the bottom electrode of the programmable metallization cell (PMC) memory to significantly improve the resistive switching characteristic. As compared with the conventional flat copper electrode, this pyramid-structured electrode exhibited the s...
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Key words
Electrodes,Switches,Silicon,Voltage measurement,Metallization,Electron devices,Random access memory
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