Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
IEEE Electron Device Letters(2012)
摘要
We propose an epitaxial punchthrough diode for bipolar resistance RAM (RRAM) selector application. Epitaxial Si:C process is used to deposit n+/p/n+ layers which are fabricated into 300-nm-diameter vertical punchthrough diodes. High on-current density of >; 1 MA/cm2 and high on/off current ratio of >; 250 and >; 4700 (at opposite polarities) are observed. A switching speed of <; 10 ns is measured....
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关键词
Epitaxial growth,Resistance,Switches,Doping,Silicon,Arrays
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