High Temperature Silicon Carbide CMOS Integrated Circuits
Materials Science Forum(2011)
Abstract
The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450 degrees C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.
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Key words
4H SiC,Silicon Carbide,CMOS,high temperature,integrated circuit
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