Annealing Temperature Dependence of Dislocation Extension and its Effect on Electrical Characteristic of 4H-SiC PIN Diode
Materials Science Forum(2015)
摘要
In this study, we investigated the annealing temperature dependence of dislocation extension in an ion-implanted region of a 4H-silicon carbide (SiC) C-face epitaxial layer, revealing that a high temperature annealing led to dislocation formation. We also investigated the current-voltage (I-V) characteristics of a 4H-SiC PIN diode with and without these extended dislocations. We demonstrated that the forward biased I-V characteristics of samples with extended interfacial dislocations have a kink at lower current regions.
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关键词
dislocation extension,annealing,h-sic
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