Properties of a SiC Schottky Barrier Diode Fabricated with a Thin Substrate

One of the attractive methods to reduce the differential resistance of SiC devices is to make the thickness of a SiC substrate thinner [1]. Therefore, we fabricated SiC Schottky barrier diode (SBD) chips with a thickness below 150 mu m and the properties of the SiC-SBD chips were measured. It was confirmed that the junction temperature of the thin SiC-SBD chips was decreased by the combination of the reduction in a thickness of the chip and the back side bonding of the chip using a material with high thermal conductivity. Moreover, it was confirmed that the potential of the thin SiC-SBD chip for the surge current capacity could be enhanced to combine the thin SiC-SBD chip with the back side bonding which has high thermal conductivity.