P‐154L: Late‐News Poster: Stability Enhancement of Oxide TFTs By Blue Laser Annealing

Highly stable, amorphous‐indium.gallium.zinc‐oxide (a‐IGZO) thin‐film transistors (TFTs) with the conventional back channeletch (BCE) structure are achieved by post‐fabrication blue (445 nm) laser annealing (BLA). The blue laser has a 350 µm × 350 µm square beam profile and is scanned line by line in the TFT channel width direction. It is found that after BLA, the BCE a‐IGZO TFTs exhibited better stability under negative bias and light‐illumination stress.