Structural and electrical properties of high-quality 0.41μm-thick InSb films grown on GaAs (100) substrate with In x Al 1−x Sb continuously graded buffer

High-quality InSb was grown on a GaAs (100) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41μm-thick InSb was 46,300cm2/Vs at 300K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.