Microstructural Characterization of HgCdSe Grown by Molecular Beam Epitaxy on ZnTe/Si(112) and GaSb(112) Substrates
Journal of Electronic Materials(2012)
摘要
Transmission electron microscopy and small-probe microanalysis have been used to investigate the microstructure of HgCdSe thin films grown by molecular beam epitaxy on ZnTe/Si(112) and GaSb(112) substrates. The quality of the HgCdSe material was dependent on the growth temperature and materials flux, independent of the substrate. Samples grown at 100°C were generally of high quality, while those grown at 140°C had {111}-type stacking defects and increased dislocation densities. Improved preparation of the GaSb buffer layer should be developed for future HgCdSe growth on GaSb(112) substrates.
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关键词
HgCdSe, ZnTe/Si(112), GaSb(112), MBE, TEM
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