Chemical vapor deposition growth of Fe 3 O 4 thin films and Fe/Fe 3 O 4 bi-layers for their integration in magnetic tunnel junctions

A possible route for the synthesis of Fe3O4, Fe, and Fe/Fe3O4 bi-layers with chemical vapor deposition by employing the same Fe3(CO)12 carbonyl precursor is presented. The comprehensive structural, chemical, and morphological investigation of the as-deposited thin single films and bi-layers is performed by X-ray diffraction, X-ray reflectivity, Raman spectroscopy, and time-of-flight secondary ion mass spectrometry depth profiling. We present the possibility of performing the deposition of pure metallic Fe and Fe3O4/γ-Fe2O3 by adjusting the deposition pressure from 10-3/-4Pa to 1Pa, respectively. The integration of Fe3O4 thin films in a magnetic tunnel junction stack fully synthesized by in situ atomic layer and chemical vapor deposition processes is also presented, showing good stack stability and marginal interdiffusion.