The effect of growth temperature on the coaxial In x Ga 1 − x N/GaN nanowires grown by metalorganic chemical vapor deposition

We report on the growth of coaxial InxGa1−xN/GaN nanowires (NWs) on Si(111) substrates by using pulsed flow metalorganic chemical vapor deposition. The coaxial InxGa1−xN/GaN NWs were grown by a two step process in which the core (GaN) structure was grown at a higher temperature followed by the shell (InxGa1−xN) structure at a lower temperature. Dense and well-oriented coaxial InxGa1−xN/GaN NWs were grown with an average diameter and length of about 300±50nm and 1.5–2.0μm, respectively. The coaxial InxGa1−xN/GaN NW was confirmed by cathodoluminescence mapping and high-resolution transmission electron microscopy. It is proposed that the critical dissociation of precursors at an elevated growth temperature can lead to a clear formation of an outer-shell in coaxial InxGa1−xN/GaN NWs.