Low temperature oxide desorption in GaAs (111)A substrates

David Fuster,Laia Gines Bartolome,Yolanda Gonzalez Diez,Jesus Herranz Zamorano,J M Calleja,Luisa Gonzalez Sotos

Thin Solid Films（2013）

引用 3|浏览14

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摘要

The aim of this work is to study oxide removal processes on GaAs (111) A substrates previous to epitaxial growth. We have studied conventional thermal desorption and processes based on the reduction of surface oxides by deposition of gallium, indium and exposure to atomic hydrogen.

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关键词

Molecular beam epitaxy,Gallium arsenide (111)A,Oxide desorption

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