In-situ monitoring of ion-beam luminescence of Si–O–C(–H) ceramics under proton-beam irradiation

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN(2015)

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Abstract
Two kinds of Si-O-C(-H) particles having intrinsic photoluminescence (PL) spectra were prepared from silicone resin microspheres by heat treatment in a hydrogen atmosphere at 800 or 1100 degrees C. The obtained particles were painted on a Si substrate using a binder, and ion-beam-luminescence spectra were observed under proton beam irradiation with an acceleration energy in the range of 1-3MeV. Observed spectra had peaks at wavelength of 520-540 nm. These peak wavelengths were larger than those observed under UV light irradiation. The luminescence of H-2 1100 (sample decarbonized at 1100 degrees C) was bright, and that of H-2 800 (sample decarbonized at 800 degrees C) was faint. However, the intensity of luminescence decreased rapidly at an early stage of the beam irradiation. In air, a sharp luminescence band with a peak at 300nm appeared together with the main emission with a peak in the range of 520-540 nm. The existence of the sharp band at 300nm was apparent in the H-2 800 spectra, whereas it appeared as a minor peak in the H-2 1100 spectra in air. (C) 2015 The Ceramic Society of Japan. All rights reserved.
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Key words
Silicon oxycarbide,Beam-luminescence,Photoluminescence,Precursor method,Ion beam
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