Synthesis of InSb Films by Reduction of Metal Alkoxide-Derived InSbO4.

A new synthetic route based on a solution chemistry was developed for a compound semiconductor indium antimonide (InSb). Considering the moisture sensitive properties of metal alkoxides, indium antimonide was synthesized by reduction of InSbO4, which was prepared by hydrolysis of the corresponding metal alkoxides as starting materials. InSb-alkoxide solution was prepared by two ways: one is mixed method in which In-alkoxide solution and Sb-alkoxide solution were mixed simply, and the other is continuous method using the reaction of indium chloride with Na-alkoxide in the presence of Sb-alkoxide in ethanol. Hydrolysis products by both methods were crystallized to InSbO4 by heat-treatment at 780degreesC in air. InSb was obtained by heat-treatment of hydrolysis product prepared by the continuous method at 400degreesC in H-2, but it wasn't obtained from hydrolysis product prepared by the mixed method. The primary particle size of hydrolysis products was about 8 nm in diameters. The wet hydrolysis product was well mixed with ethylcellulose and terpineol by a three-roll mill to form printing paste. The paste was screen-printed on slide glass substrates, transformed to InSb film by heat treatment at 400degreesC in H-2.