Improved Conductivity-Measurement Of Semiconductor Epitaxial Layers By Means Of The Contactless Microwave Method
MILLIMETER AND SUBMILLIMETER WAVES(1994)
摘要
Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless conductivity measurements of MBE-grown II-VI semiconductor layers.© (1994) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
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关键词
semiconductors,molecular beam epitaxy,cross section,algorithms,scattering,waveguides
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