Design of microresonator quantum well intensity modulators based on an absorption blue-shift

A micro resonator quantum well intensity modulator for operation in the wavelength band around 1 mu m is described. High efficiency 90 degrees bends are used to form the resonator and also provide optimal coupling to the external waveguide. The benefits are to reduce loss, to relax the lithography requirements and to provide more flexible contact designs to the modulator. The characteristics of modulator are analyzed using optical simulation tools and based on measured absorption parameters. The modulator operates with two distinctly different electrode configurations which are both based on the index change calculated using Kramers-Kronig relations. A model including parasitic is developed for HSPICE transient simulations and run in the AGILENT ADS environment. The performance parameters are determined to be an extinction ratio of 10.4dB, a bandwidth of 33GHz, and a dc power less than 1mW for device dimensions of 16x6 mu m(2).