Demonstrating Production Quality Multiple Exposure Patterning Aware Routing For The 10nm Node

DESIGN-PROCESS-TECHNOLOGY CO-OPTIMIZATION FOR MANUFACTURABILITY VIII(2014)

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摘要
This paper reviews the escalation in design constraints imposed on 2nd level wiring by multiple patterning exposure techniques in the 10NM technology node (i.e. similar to 45nm wiring pitch) relative to the 14NM technology node (i.e. 64nm wiring pitch). Specifically, new challenges facing place-and-route tooling are outlined, solutions to overcome these challenges are reviewed, and a manufacturing ready implementation is demonstrated.
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关键词
Self aligned double patterning,sidewall image transfer,color-aware placement,multiple-patterning aware routing
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